美高梅官网

CN EN
Home
About Us
Newpros
New N150V SGT MOSFETs
New N150V SGT MOSFETs Back
 PDF

Introduction Power over Ethernet Protocol (PoE) has been available for many years. A new standard IEEE 802.3bt was approved in 2018, which increases the maximum power that can be transmitted through twisted-pair Ethernet cables and encourages new PoE applications to pursue higher power density.Current power supply equipment (PSE) provides up to 100W of power and supports 8 different power levels;Power Device (PD) will be able to use up to 71W of power.Yangjie launched N150V serialized products for IEEE802.3af&at&bt.Using SGT technology, it has higher switching speeds and lower losses than traditional Trench MOS products.
Features 1、Using SGT technology, the product has low internal resistance and excellent switching characteristics
2、PDFN5060, SO-8, TO252, ITO220AB multiple packages are optional
3、Applicable to IEEE802.3af&at&bt protocol PD power supply
SPECIFICATION

YJD18G15A YJG15G15A YJG60G15HJ YJS05G15A

Related new products

SOD-323HE Diode for Automotive 、Home Appliances, Etc

New 100V 3.2mΩ SGT MOSFET for PD power supply

New SiC MOSFET for Photovoltaic Energy Storage, OBC&Power Supply

New N40V SGT MOSFETs for Sweeper

Three-phase Rectifier Module N5/N6

SGT MOSFET for PV Microinverter

DFN1006-3L Package Small Signal Device

N+P Dual 30V Trench MOSFET for Fan Control

DFN1608 Package Small Signal Schottky Diode for Mobile Phone PCB

80A/1200V IGBT Discrete for Automotive PTC
网站地图