美高梅官网

CN EN
Home
About Us
Newpros
120V SGT process N-channel MOSFET
120V SGT process N-channel MOSFET Back
 PDF

Introduction 1. Adopt Yangjie Technology SGT special process to optimize the performance of internal conduction resistance (Rdson) and gate charge (Qg) according to the requirements of motor drive and power supply application, reduce conduction loss and switching loss, and improve system efficiency;
2. Solve the problem of high side voltage spike caused by high DI/DT when high-speed Gan power supply is applied, and improve the overall reliability of the product.
Features 1. Adopt Yangjie SGT special process design, with higher process stability and reliability;
2. The series products have faster switching speed, smaller gate charge and higher application efficiency;
3. Using PDFN5060 package, better thermal resistance characteristics.
SPECIFICATION

YJG88G12A

Related new products

IGBT 50A/75A 1200V Discrete for Industrial Control

100V TOLL Package MOSFET

Three-phase Rectifier Module N5/N6

1200V 80 mΩ SIC MOSFET

IGBT high frequency series C1 module

SKBPC75 High Current Three Phase Bridge Rectifiers

N100V MOSFET for Automotive Electronic Applications

SOT-227 FJ Package Vehicle Module

NP – sealed MOSFET for cooling fan

Optimization Design of Rectifier Bridge —— New Package GBU-L
网站地图